AUIRFSA8409-7P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

360A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

460nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

375W Tc

Input Capacitance (Ciss) (Max) @ Vds :

13975pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2016

Factory Lead Time :

15 Weeks

Rds On (Max) @ Id, Vgs :

0.69m Ω @ 100A, 10V

Vgs (Max) :

±20V

Series :

Automotive, AEC-Q101, HEXFET®

Drain-source On Resistance-Max :

0.00069Ohm

Mount :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

523A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

40V

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

523A Tc

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Elements :

1

Terminal Position :

Single

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1450 mJ

Packaging :

Tube

JESD-30 Code :

R-PSSO-G6

Pulsed Drain Current-Max (IDM) :

1440A

Number of Terminations :

6