AUIRFS8409-7P
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- Mfr.Part #
- AUIRFS8409-7P
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 240A D2PAK
- Stock
- 3,246
- In Stock ：
- 3,246
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HEXFET®
- Turn On Delay Time :
- 32 ns
- Base Part Number :
- IRFS8409
- Drain to Source Breakdown Voltage :
- 40V
- Width :
- 9.65mm
- Vgs(th) (Max) @ Id :
- 3.9V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 3V
- Rise Time :
- 148ns
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Nominal Vgs :
- 3 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Published :
- 2010
- Rds On (Max) @ Id, Vgs :
- 0.75m Ω @ 100A, 10V
- Fall Time (Typ) :
- 107 ns
- ECCN Code :
- EAR99
- Height :
- 4.83mm
- Radiation Hardening :
- No
- Number of Channels :
- 1
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Number of Pins :
- 7
- Power Dissipation-Max :
- 375W Tc
- Turn-Off Delay Time :
- 149 ns
- Length :
- 10.67mm
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Continuous Drain Current (ID) :
- 240A
- Power Dissipation :
- 375W
- Gate Charge (Qg) (Max) @ Vgs :
- 460nC @ 10V
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 13975pF @ 25V
- Packaging :
- Tube
- Datasheets
- AUIRFS8409-7P
N-Channel Tube 0.75m Ω @ 100A, 10V ±20V 13975pF @ 25V 460nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
AUIRFS8409-7P Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 13975pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 240A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [149 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 32 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
AUIRFS8409-7P Features
a continuous drain current (ID) of 240A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 149 ns
a threshold voltage of 3V
AUIRFS8409-7P Applications
There are a lot of Infineon Technologies
AUIRFS8409-7P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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