AUIRFS8407TRR
- Mfr.Part #
- AUIRFS8407TRR
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 195A D2PAK
- Stock
- 395
- In Stock :
- 395
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Power Dissipation :
- 230 W
- Mounting Type :
- Surface Mount
- Package :
- Bulk
- Product Status :
- Active
- RoHS :
- Compliant
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20 V
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55 °C
- Turn-Off Delay Time :
- 78 ns
- Current - Continuous Drain (Id) @ 25°C :
- 195A (Tc)
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 195 A
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 225 nC @ 10 V
- Power Dissipation (Max) :
- 230W (Tc)
- Number of Channels :
- 1
- Number of Pins :
- 3
- FET Feature :
- -
- Turn-On Delay Time :
- 19 ns
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Technology :
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds :
- 7330 pF @ 25 V
- Supplier Device Package :
- D2PAK
- Series :
- Automotive, AEC-Q101, HEXFET®
- Drain to Source Resistance :
- 1.4 mΩ
- Rds On (Max) @ Id, Vgs :
- 1.8mOhm @ 100A, 10V
- Contact Plating :
- Tin
- Drain to Source Voltage (Vdss) :
- 4 V
- Drain to Source Breakdown Voltage :
- 40 V
- Max Operating Temperature :
- 175 °C
- Rise Time :
- 70 ns
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Datasheets
- AUIRFS8407TRR
MOSFET (Metal Oxide) N-Channel 1.8mOhm @ 100A, 10V ±20V 7330 pF @ 25 V 225 nC @ 10 V 4 V TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AUIRFS8407TRR Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7330 pF @ 25 V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40 V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40 V.As a result of its turn-off delay time, which is 78 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.4 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20 VV.The transistor must receive a 4 V drain to source voltage (Vdss) in order to function.
AUIRFS8407TRR Features
a continuous drain current (ID) of 195 A
a drain-to-source breakdown voltage of 40 V voltage
the turn-off delay time is 78 ns
single MOSFETs transistor is 1.4 mΩ
a 4 V drain to source voltage (Vdss)
AUIRFS8407TRR Applications
There are a lot of International Rectifier
AUIRFS8407TRR applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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