AUIRFS8407

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Nominal Vgs :

3 V

Published :

2011

REACH SVHC :

No SVHC

Power Dissipation-Max :

230W Tc

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Radiation Hardening :

No

Fall Time (Typ) :

53 ns

Base Part Number :

IRFS8407

Threshold Voltage :

3V

Number of Pins :

3

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Input Capacitance (Ciss) (Max) @ Vds :

7330pF @ 25V

Width :

9.65mm

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 100A, 10V

Power Dissipation :

230W

Height :

4.83mm

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Turn On Delay Time :

19 ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

195A

Packaging :

Tube

Factory Lead Time :

16 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.67mm

Turn-Off Delay Time :

78 ns

FET Type :

N-Channel

Rise Time :

70ns

Series :

HEXFET®

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 150μA

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

40V