AUIRFS8403

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

40V

Length :

10.67mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 70A, 10V

Packaging :

Tube

Vgs (Max) :

±20V

Power Dissipation-Max :

99W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3183pF @ 25V

Nominal Vgs :

3 V

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

3.183nF

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83mm

Mounting Type :

Surface Mount

Radiation Hardening :

No

Lead Free :

Lead Free

Max Operating Temperature :

175°C

Rds On Max :

3.3 mΩ

Power Dissipation :

99W

Width :

9.65mm

Continuous Drain Current (ID) :

123A

Gate to Source Voltage (Vgs) :

20V

Rise Time :

77ns

Current - Continuous Drain (Id) @ 25°C :

123A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

26 ns

FET Type :

N-Channel

Supplier Device Package :

D2PAK

Fall Time (Typ) :

43 ns

Series :

HEXFET®

Contact Plating :

Tin

Drain to Source Resistance :

2.6MOhm

Published :

2013

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

10 ns

Factory Lead Time :

10 Weeks

Number of Channels :

1