AUIRFS4610

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Packaging :

Tube

Turn On Delay Time :

18 ns

Length :

10.67mm

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

290A

Case Connection :

DRAIN

Nominal Vgs :

2 V

Power Dissipation-Max :

190W Tc

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Height :

4.83mm

Rds On (Max) @ Id, Vgs :

14m Ω @ 44A, 10V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Radiation Hardening :

No

Contact Plating :

Tin

Mounting Type :

Surface Mount

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

87ns

Width :

11.3mm

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Published :

2010

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Fall Time (Typ) :

70 ns

Vgs(th) (Max) @ Id :

4V @ 100µA

Number of Pins :

3

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V

Continuous Drain Current (ID) :

73A

Number of Terminations :

2

Transistor Application :

SWITCHING

Power Dissipation :

190W

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

39 Weeks

Mount :

Surface Mount

Turn-Off Delay Time :

53 ns

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

3550pF @ 50V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB