AUIRFS4310Z
- Mfr.Part #
- AUIRFS4310Z
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- AUIRFS4310 - 75V-100V N-CHANNEL
- Stock
- 27,002
- In Stock :
- 27,002
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Series :
- HEXFET®
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 560A
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 250W Tc
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 75A, 10V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 6860pF @ 50V
- DS Breakdown Voltage-Min :
- 100V
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Avalanche Energy Rating (Eas) :
- 130 mJ
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Published :
- 2010
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Drain Current-Max (Abs) (ID) :
- 120A
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Drain-source On Resistance-Max :
- 0.006Ohm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 11 Weeks
- Datasheets
- AUIRFS4310Z

N-Channel Tube 6m Ω @ 75A, 10V ±20V 6860pF @ 50V 170nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFS4310Z Description
Designed for automotive applications, this HEXFET power MOSFET uses the latest technology to achieve extremely low on-resistance per silicon area. Other features of the design include a 175 °C junction operating temperature, fast switching speed and an improved repeated avalanche rating. The combination of these features makes the design an extremely efficient and reliable device for automotive and various other applications .
AUIRFS4310Z Features
· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-Free, RoHS Compliant
· Automotive Qualified
AUIRFS4310Z Applications
Automotive
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