AUIRFS4310Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Number of Terminations :

2

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

6m Ω @ 75A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

120A

Power Dissipation-Max :

250W Tc

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Factory Lead Time :

11 Weeks

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

560A

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

6860pF @ 50V

Transistor Application :

SWITCHING

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Avalanche Energy Rating (Eas) :

130 mJ

Surface Mount :

yes

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.006Ohm

Mounting Type :

Surface Mount

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 150μA