AUIRFS4310

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

4.83mm

Rise Time :

110ns

Rds On (Max) @ Id, Vgs :

7m Ω @ 75A, 10V

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.007Ohm

Width :

9.65mm

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Power Dissipation-Max :

300W Tc

Number of Terminations :

2

Radiation Hardening :

No

Nominal Vgs :

2 V

RoHS Status :

ROHS3 Compliant

Published :

2010

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Fall Time (Typ) :

78 ns

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Threshold Voltage :

2V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.67mm

Number of Pins :

3

Terminal Form :

Gull wing

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

7670pF @ 50V

Power Dissipation :

300W

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Turn On Delay Time :

26 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

130A

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

980 mJ

Turn-Off Delay Time :

68 ns

Contact Plating :

Tin

Drain Current-Max (Abs) (ID) :

75A

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

550A

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®