AUIRFS4310

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Power Dissipation-Max :

300W Tc

Height :

4.83mm

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Contact Plating :

Tin

Number of Elements :

1

Power Dissipation :

300W

JESD-609 Code :

e3

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

75A

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Threshold Voltage :

2V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

78 ns

Turn-Off Delay Time :

68 ns

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Continuous Drain Current (ID) :

130A

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

980 mJ

Input Capacitance (Ciss) (Max) @ Vds :

7670pF @ 50V

Drain to Source Breakdown Voltage :

100V

Drain-source On Resistance-Max :

0.007Ohm

ECCN Code :

EAR99

Width :

9.65mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

110ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Rds On (Max) @ Id, Vgs :

7m Ω @ 75A, 10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

550A

Length :

10.67mm

Number of Terminations :

2

Case Connection :

DRAIN

Nominal Vgs :

2 V

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Turn On Delay Time :

26 ns