AUIRFS4127

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

250 mJ

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

375mW

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Series :

Automotive, AEC-Q101, HEXFET®

Additional Feature :

FAST SWITCHING, ULTRA-LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

16 Weeks

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

72A

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5380pF @ 50V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

22m Ω @ 44A, 10V

Published :

2015

Drain-source On Resistance-Max :

0.022Ohm

Terminal Form :

Gull wing

Number of Terminations :

2

Packaging :

Tube

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

72A Tc

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Power Dissipation-Max :

375W Tc

Number of Pins :

3

Mount :

Surface Mount