AUIRFS4010

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Packaging :

Tube

Fall Time (Typ) :

77 ns

Contact Plating :

Tin

REACH SVHC :

No SVHC

Length :

10.67mm

Width :

9.65mm

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Case Connection :

DRAIN

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 106A, 10V

Mounting Type :

Surface Mount

Number of Elements :

1

Rise Time :

86ns

Input Capacitance (Ciss) (Max) @ Vds :

9575pF @ 50V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

4.83mm

Terminal Form :

Gull wing

Element Configuration :

Single

Turn On Delay Time :

21 ns

Published :

2011

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Number of Terminations :

2

Transistor Application :

SWITCHING

Power Dissipation-Max :

375W Tc

Continuous Drain Current (ID) :

180A

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

100 ns

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

375W

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0047Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Pulsed Drain Current-Max (IDM) :

720A

Factory Lead Time :

16 Weeks