AUIRFS4010

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

21 ns

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Number of Elements :

1

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0047Ohm

Published :

2011

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

9575pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Width :

9.65mm

REACH SVHC :

No SVHC

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

180A

Length :

10.67mm

Mounting Type :

Surface Mount

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

100V

Height :

4.83mm

Fall Time (Typ) :

77 ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Power Dissipation-Max :

375W Tc

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 106A, 10V

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Transistor Application :

SWITCHING

Power Dissipation :

375W

Mount :

Surface Mount

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Turn-Off Delay Time :

100 ns

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

720A

Rise Time :

86ns

JESD-609 Code :

e3

Terminal Form :

Gull wing