AUIRFS4010-7P
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- Mfr.Part #
- AUIRFS4010-7P
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- AUIRFS4010 - 120V-300V N-CHANNEL
- Stock
- 287
- In Stock ：
- 287
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.65mm
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 19 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 110A, 10V
- Power Dissipation-Max :
- 380W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Length :
- 10.67mm
- JESD-30 Code :
- R-PSSO-G6
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2010
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Turn-Off Delay Time :
- 100 ns
- Factory Lead Time :
- 10 Weeks
- Power Dissipation :
- 380W
- Rise Time :
- 56ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 330 mJ
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 190A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 9830pF @ 50V
- Contact Plating :
- Tin
- Height :
- 4.83mm
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 7
- Series :
- HEXFET®
- Drain to Source Breakdown Voltage :
- 100V
- Drain-source On Resistance-Max :
- 0.004ohm
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
- Fall Time (Typ) :
- 48 ns
- Continuous Drain Current (ID) :
- 190A
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Number of Terminations :
- 6
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Datasheets
- AUIRFS4010-7P
N-Channel Tube 4m Ω @ 110A, 10V ±20V 9830pF @ 50V 230nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
AUIRFS4010-7P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 330 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9830pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 190A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 100 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
AUIRFS4010-7P Features
the avalanche energy rating (Eas) is 330 mJ
a continuous drain current (ID) of 190A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
AUIRFS4010-7P Applications
There are a lot of Infineon Technologies
AUIRFS4010-7P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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