AUIRFS3806TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 50V

Rds On (Max) @ Id, Vgs :

15.8m Ω @ 25A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

170A

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

60V

Series :

HEXFET®

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Avalanche Energy Rating (Eas) :

73 mJ

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Surface Mount :

yes

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

43A

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 50μA

Published :

2015

FET Type :

N-Channel

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0158Ohm

Power Dissipation-Max :

71W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Number of Terminations :

2

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260