AUIRFS3607

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Drain-source On Resistance-Max :

0.009Ohm

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

120 mJ

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Power Dissipation-Max :

140W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

75V

ECCN Code :

EAR99

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

75V

Number of Elements :

1

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 100µA

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

80A

Pulsed Drain Current-Max (IDM) :

310A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes