AUIRFS3607

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

75V

JESD-609 Code :

e3

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Series :

HEXFET®

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

120 mJ

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Power Dissipation-Max :

140W Tc

Drain-source On Resistance-Max :

0.009Ohm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

310A

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

80A

Published :

2010

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Number of Elements :

1

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Drain to Source Voltage (Vdss) :

75V

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 100µA