AUIRFS3307Z
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- Mfr.Part #
- AUIRFS3307Z
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A D2PAK
- Stock
- 13,833
- In Stock ：
- 13,833
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 75V
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0058ohm
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 75A, 10V
- Number of Terminations :
- 2
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Length :
- 10.67mm
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 120A
- Turn On Delay Time :
- 15 ns
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Terminal Form :
- Gull wing
- Rise Time :
- 64ns
- Width :
- 9.65mm
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Power Dissipation :
- 230W
- Published :
- 2011
- Power Dissipation-Max :
- 230W Tc
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Height :
- 4.83mm
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 65 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 480A
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 38 ns
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Contact Plating :
- Tin
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 4750pF @ 50V
- ECCN Code :
- EAR99
- Datasheets
- AUIRFS3307Z
N-Channel Tube 5.8m Ω @ 75A, 10V ±20V 4750pF @ 50V 110nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRFS3307Z Overview
A device's maximum input capacitance is 4750pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 120A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=75V, and this device has a drain-to-source breakdown voltage of 75V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 38 ns.Its maximum pulsed drain current is 480A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
AUIRFS3307Z Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 480A.
AUIRFS3307Z Applications
There are a lot of Infineon Technologies
AUIRFS3307Z applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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