AUIRFS3306TRL

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Power Dissipation-Max :

230W Tc

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Published :

2011

Fall Time (Typ) :

77 ns

Contact Plating :

Tin

Turn-Off Delay Time :

40 ns

Turn On Delay Time :

15 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 75A, 10V

Case Connection :

DRAIN

Rise Time :

76ns

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

120A

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0042Ohm

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Width :

9.65mm

Mount :

Surface Mount

Power Dissipation :

230W

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 150μA

Pulsed Drain Current-Max (IDM) :

620A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.67mm

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

2

Height :

4.83mm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

FET Type :

N-Channel