AUIRFS3306

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Case Connection :

DRAIN

Number of Elements :

1

Avalanche Energy Rating (Eas) :

184 mJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

620A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

120A

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 150μA

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation-Max :

230W Tc

Surface Mount :

yes

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Series :

HEXFET®

Mounting Type :

Surface Mount

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~175°C TJ

Published :

2011

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 75A, 10V

Drain-source On Resistance-Max :

0.0042Ohm

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

4520pF @ 50V

FET Type :

N-Channel

Transistor Element Material :

SILICON