AUIRFS3206TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

3m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

6540pF @ 50V

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 150μA

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

120A

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2015

Drain-source On Resistance-Max :

0.003Ohm

Avalanche Energy Rating (Eas) :

170 mJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

840A

Terminal Position :

Single

DS Breakdown Voltage-Min :

60V

Surface Mount :

yes

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

300W Tc