AUIRFS3107TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Fall Time (Typ) :

100 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Drain to Source Breakdown Voltage :

75V

Length :

10.67mm

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Radiation Hardening :

No

Width :

9.65mm

Input Capacitance (Ciss) (Max) @ Vds :

9370pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Turn On Delay Time :

19 ns

Published :

2011

Rise Time :

110ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

JESD-30 Code :

R-PSSO-G2

Series :

Automotive, AEC-Q101, HEXFET®

Rds On (Max) @ Id, Vgs :

3m Ω @ 140A, 10V

Turn-Off Delay Time :

99 ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

195A

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Height :

4.83mm

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

900A

Power Dissipation-Max :

370W Tc

Power Dissipation :

370W

Mounting Type :

Surface Mount

Contact Plating :

Tin