AUIRFS3107

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

9370pF @ 50V

Power Dissipation-Max :

370W Tc

Current - Continuous Drain (Id) @ 25°C :

195A Tc

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

900A

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Width :

9.65mm

Mounting Type :

Surface Mount

Rise Time :

110ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

3m Ω @ 140A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Turn-Off Delay Time :

99 ns

Factory Lead Time :

16 Weeks

Radiation Hardening :

No

Transistor Application :

SWITCHING

Height :

4.83mm

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

75V

Turn On Delay Time :

19 ns

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, HEXFET®

Fall Time (Typ) :

100 ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

195A

Vgs (Max) :

±20V

Power Dissipation :

370W

Published :

2011

Number of Pins :

3

Length :

10.67mm

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA