AUIRFS3107-7P
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- Mfr.Part #
- AUIRFS3107-7P
- Manufacturer
- International Rectifier
- Package / Case
- Datasheet
- Download
- Description
- AUIRFS3107 - 55V-60V N-CHANNEL A
- Stock
- 2,891
- In Stock ：
- 2,891
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 17 ns
- Avalanche Energy Rating (Eas) :
- 320 mJ
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Width :
- 9.65mm
- Drain-source On Resistance-Max :
- 0.0026Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 370W
- Series :
- HEXFET®
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Number of Pins :
- 7
- Continuous Drain Current (ID) :
- 240A
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 75V
- JEDEC-95 Code :
- TO-263CB
- Published :
- 2010
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 9200pF @ 50V
- Terminal Form :
- Gull wing
- Additional Feature :
- ULTRA LOW RESISTANCE
- JESD-30 Code :
- R-PSSO-G6
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Fall Time (Typ) :
- 64 ns
- Number of Terminations :
- 6
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 4.83mm
- Current - Continuous Drain (Id) @ 25°C :
- 240A Tc
- Power Dissipation-Max :
- 370W Tc
- Length :
- 10.67mm
- Rise Time :
- 80ns
- Rds On (Max) @ Id, Vgs :
- 2.6m Ω @ 160A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 100 ns
- Datasheets
- AUIRFS3107-7P
N-Channel Tube 2.6m Ω @ 160A, 10V ±20V 9200pF @ 50V 240nC @ 10V TO-263-7, D2Pak (6 Leads + Tab)
AUIRFS3107-7P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 320 mJ.The maximum input capacitance of this device is 9200pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 240A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 100 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
AUIRFS3107-7P Features
the avalanche energy rating (Eas) is 320 mJ
a continuous drain current (ID) of 240A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 100 ns
AUIRFS3107-7P Applications
There are a lot of Infineon Technologies
AUIRFS3107-7P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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