AUIRFS3107-7P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

75V

Power Dissipation-Max :

370W Tc

Packaging :

Tube

Mounting Type :

Surface Mount

Contact Plating :

Tin

JESD-30 Code :

R-PSSO-G6

Number of Pins :

7

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 50V

Series :

HEXFET®

Mount :

Surface Mount

Height :

4.83mm

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

320 mJ

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

ECCN Code :

EAR99

Published :

2010

Transistor Element Material :

SILICON

Turn-Off Delay Time :

100 ns

Operating Temperature :

-55°C~175°C TJ

Rise Time :

80ns

Length :

10.67mm

Additional Feature :

ULTRA LOW RESISTANCE

Continuous Drain Current (ID) :

240A

Power Dissipation :

370W

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Fall Time (Typ) :

64 ns

JEDEC-95 Code :

TO-263CB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

17 ns

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0026Ohm

Element Configuration :

Single

Number of Elements :

1

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 160A, 10V

Case Connection :

DRAIN

Number of Terminations :

6

Width :

9.65mm