AUIRFS3004-7P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

1610A

Drain to Source Voltage (Vdss) :

40V

Published :

2015

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-263CB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

40V

Terminal Position :

Single

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

ECCN Code :

EAR99

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

1.25m Ω @ 195A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

9130pF @ 25V

Drain Current-Max (Abs) (ID) :

240A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

380W Tc

Number of Terminations :

6

Number of Elements :

1

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

JESD-30 Code :

R-PSSO-G6

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

290 mJ

Drain-source On Resistance-Max :

0.00125Ohm

Factory Lead Time :

16 Weeks