AUIRFR9024N

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

38W Tc

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

175m Ω @ 6.6A, 10V

DS Breakdown Voltage-Min :

55V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

55V

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

11A Tc

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Factory Lead Time :

16 Weeks

Drain-source On Resistance-Max :

0.175Ohm

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Published :

2014

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Series :

HEXFET®

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

44A

Avalanche Energy Rating (Eas) :

62 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

11A

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

JESD-609 Code :

e3