AUIRFR8405

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Packaging :

Tube

Drain to Source Breakdown Voltage :

40V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

51 ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

100A

Rise Time :

80ns

Power Dissipation :

163W

Vgs (Max) :

±20V

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

163W Tc

Vgs(th) (Max) @ Id :

3.9V @ 100µA

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

5171pF @ 25V

Nominal Vgs :

3 V

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

ECCN Code :

EAR99

Series :

HEXFET®

Published :

2013

Factory Lead Time :

15 Weeks

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Height :

2.39mm

Element Configuration :

Single

REACH SVHC :

No SVHC

Turn On Delay Time :

12 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Length :

6.73mm

Base Part Number :

IRFR8405

Width :

6.22mm

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

1.98m Ω @ 90A, 10V

Fall Time (Typ) :

51 ns