AUIRFR8401
- Mfr.Part #
- AUIRFR8401
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A DPAK
- Stock
- 6,582
- In Stock :
- 6,582
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 79W
- Max Operating Temperature :
- 175°C
- Drain to Source Voltage (Vdss) :
- 40V
- Packaging :
- Tube
- Drain to Source Resistance :
- 4.25mOhm
- Mount :
- Surface Mount
- Length :
- 6.73mm
- Nominal Vgs :
- 2.2 V
- Width :
- 6.22mm
- Number of Elements :
- 1
- Base Part Number :
- IRFR8401
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Height :
- 2.39mm
- Drain to Source Breakdown Voltage :
- 40V
- Turn-Off Delay Time :
- 25 ns
- Contact Plating :
- Tin
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 3.9V
- Power Dissipation-Max :
- 79W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 2.2nF
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Series :
- HEXFET®
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 3.9V @ 50µA
- Rds On (Max) @ Id, Vgs :
- 4.25mOhm @ 60A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2200pF @ 25V
- Rds On Max :
- 4.25 mΩ
- Rise Time :
- 34ns
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- D-Pak
- Fall Time (Typ) :
- 24 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Turn On Delay Time :
- 7.9 ns
- Continuous Drain Current (ID) :
- 100A
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 13 Weeks
- Datasheets
- AUIRFR8401

N-Channel Tube 4.25mOhm @ 60A, 10V ±20V 2200pF @ 25V 63nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFR8401 Description
This HEXFET? Power MOSFETs, which is specifically made for automotive applications, makes use of cutting-edge processing processes to provide low on-resistance per silicon area. This feature gives the designer an incredibly efficient and dependable device for use in automotive and a wide range of other applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are well known for.
AUIRFR8401 Features
-
Technology for Advanced Processes
-
Introducing New Ultra Low On-Resistance
-
Operating temperature of 175 °C
-
Quick Switching
-
Recurrent Avalanche Permitted up to Tjmax
-
Lead-free and compliant with RoHS
-
Automotive Competent
AUIRFR8401 Applications
-
EPS (Electric Power Steering)
-
Charger Switch
-
Micro Hybrid Start/Stop
-
Large Loads
-
Converter for DC-DC
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