AUIRFR8401

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Fall Time (Typ) :

24 ns

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Threshold Voltage :

3.9V

Packaging :

Tube

Mount :

Surface Mount

Input Capacitance :

2.2nF

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

79W Tc

Width :

6.22mm

Drain to Source Resistance :

4.25mOhm

Power Dissipation :

79W

Turn On Delay Time :

7.9 ns

Number of Channels :

1

Max Operating Temperature :

175°C

Base Part Number :

IRFR8401

Series :

HEXFET®

Drain to Source Breakdown Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Rds On Max :

4.25 mΩ

Element Configuration :

Single

Nominal Vgs :

2.2 V

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

100A

Gate to Source Voltage (Vgs) :

20V

Rise Time :

34ns

Mounting Type :

Surface Mount

Length :

6.73mm

Rds On (Max) @ Id, Vgs :

4.25mOhm @ 60A, 10V

Published :

2009

Height :

2.39mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

FET Type :

N-Channel

Contact Plating :

Tin

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

25 ns

Drain to Source Voltage (Vdss) :

40V

Min Operating Temperature :

-55°C

Factory Lead Time :

13 Weeks

Vgs(th) (Max) @ Id :

3.9V @ 50µA

Supplier Device Package :

D-Pak