AUIRFR6215

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Rise Time :

36ns

Width :

6.22mm

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Turn On Delay Time :

14 ns

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Power Dissipation-Max :

110W Tc

Height :

2.52mm

Drain-source On Resistance-Max :

0.295Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

44A

FET Type :

P-Channel

Vgs (Max) :

±20V

Number of Elements :

1

Number of Terminations :

2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Continuous Drain Current (ID) :

-13A

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-150V

Lead Free :

Lead Free

JEDEC-95 Code :

TO-252AA

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

295m Ω @ 6.6A, 10V

Turn-Off Delay Time :

53 ns

Fall Time (Typ) :

37 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Series :

HEXFET®

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Factory Lead Time :

16 Weeks

Number of Channels :

1

Power Dissipation :

110W

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Length :

6.7056mm

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

175°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

150V