AUIRFR5505

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

28ns

Fall Time (Typ) :

16 ns

Power Dissipation-Max :

57W Tc

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Number of Pins :

3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Length :

6.73mm

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2010

Mount :

Surface Mount

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

20 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

12 ns

Series :

HEXFET®

Mounting Type :

Surface Mount

Threshold Voltage :

-2V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Radiation Hardening :

No

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-55V

JESD-609 Code :

e3

Factory Lead Time :

26 Weeks

Height :

2.39mm

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

110m Ω @ 9.6A, 10V

ECCN Code :

EAR99

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Continuous Drain Current (ID) :

18A

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

18A Tc

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

57W

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

64A

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Width :

6.22mm