AUIRFR5410TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

13A

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-252AA

Series :

Automotive, AEC-Q101, HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.205Ohm

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

205m Ω @ 7.8A, 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

52A

Avalanche Energy Rating (Eas) :

194 mJ

Power Dissipation-Max :

66W Tc

Gate Charge (Qg) (Max) @ Vgs :

58nC @ 10V

Published :

2010

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

760pF @ 25V

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

2

JESD-609 Code :

e3

Factory Lead Time :

26 Weeks

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V