AUIRFR5305TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

55V

Max Operating Temperature :

175°C

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

JESD-30 Code :

R-PSSO-G2

Published :

2010

Turn On Delay Time :

14 ns

Mounting Type :

Surface Mount

Turn-Off Delay Time :

39 ns

Number of Pins :

3

Rise Time :

66ns

Fall Time (Typ) :

63 ns

Max Power Dissipation :

110W

Radiation Hardening :

No

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Number of Elements :

1

Min Operating Temperature :

-55°C

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

280 mJ

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

P-Channel

JEDEC-95 Code :

TO-252AA

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

31A

Contact Plating :

Tin

Power Dissipation :

110W

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.065Ohm