AUIRFR5305

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Power Dissipation-Max :

110W Tc

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Number of Terminations :

2

FET Type :

P-Channel

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

Published :

2006

Turn-Off Delay Time :

39 ns

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Power Dissipation :

110W

Radiation Hardening :

No

Fall Time (Typ) :

63 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

-2V

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±20V

Resistance :

65mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Factory Lead Time :

26 Weeks

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Height :

2.39mm

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Width :

6.22mm

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

31A

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Series :

HEXFET®

Number of Pins :

3

Avalanche Energy Rating (Eas) :

280 mJ

Rise Time :

66ns

Drain to Source Breakdown Voltage :

-55V

Length :

6.73mm

Contact Plating :

Tin

Number of Elements :

1

Turn On Delay Time :

14 ns

JESD-30 Code :

R-PSSO-G2