AUIRFR48ZTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 50μA

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1720pF @ 25V

Rds On (Max) @ Id, Vgs :

11m Ω @ 37A, 10V

Avalanche Energy Rating (Eas) :

110 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

91W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Transistor Application :

SWITCHING

Terminal Position :

Single

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

55V

Drain Current-Max (Abs) (ID) :

42A

Factory Lead Time :

16 Weeks

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

55V

Drain-source On Resistance-Max :

0.011Ohm

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

250A

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Form :

Gull wing