AUIRFR4615TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

42m Ω @ 21A, 10V

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

150V

Drain Current-Max (Abs) (ID) :

33A

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Terminal Form :

Gull wing

Power Dissipation-Max :

144W Tc

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

DS Breakdown Voltage-Min :

150V

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

140A

Vgs(th) (Max) @ Id :

5V @ 100µA

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.042Ohm

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Case Connection :

DRAIN

Number of Elements :

1

Vgs (Max) :

±20V

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

109 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2011