AUIRFR4615

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Turn On Delay Time :

15 ns

Factory Lead Time :

13 Weeks

Radiation Hardening :

No

Transistor Application :

SWITCHING

Power Dissipation :

144W

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Threshold Voltage :

3V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Width :

6.22mm

Turn-Off Delay Time :

25 ns

FET Type :

N-Channel

Height :

2.39mm

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Power Dissipation-Max :

144W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

20 ns

Length :

6.73mm

Rise Time :

35ns

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

5V @ 100µA

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 50V

Drain-source On Resistance-Max :

0.042Ohm

Drain to Source Breakdown Voltage :

150V

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Published :

2011

Rds On (Max) @ Id, Vgs :

42m Ω @ 21A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

33A

Number of Pins :

3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Operating Temperature :

-55°C~175°C TJ