AUIRFR4105

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Mfr.Part #
AUIRFR4105
Manufacturer
International Rectifier
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
AUTOMOTIVE HEXFET N CHANNEL
Stock
5,362
In Stock :
5,362

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
2
JESD-609 Code :
e3
Number of Elements :
1
Additional Feature :
AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Height :
2.39mm
Transistor Element Material :
SILICON
Threshold Voltage :
2V
Fall Time (Typ) :
40 ns
Continuous Drain Current (ID) :
27A
Peak Reflow Temperature (Cel) :
260
Avalanche Energy Rating (Eas) :
29 mJ
Power Dissipation-Max :
68W Tc
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 25V
Turn-Off Delay Time :
31 ns
Width :
6.22mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
30
JEDEC-95 Code :
TO-252AA
Drain-source On Resistance-Max :
0.0245Ohm
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~175°C TJ
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
39 Weeks
Packaging :
Tube
Series :
HEXFET®
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Pins :
3
ECCN Code :
EAR99
Radiation Hardening :
No
Contact Plating :
Tin
Drain to Source Breakdown Voltage :
55V
Turn On Delay Time :
7 ns
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
45m Ω @ 16A, 10V
Published :
2011
JESD-30 Code :
R-PSSO-G2
FET Type :
N-Channel
Rise Time :
49ns
Power Dissipation :
68W
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Length :
6.73mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Case Connection :
DRAIN
Datasheets
AUIRFR4105
Introducing Transistors - FETs, MOSFETs - Single International Rectifier AUIRFR4105 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, AUIRFR4105 pinout, AUIRFR4105 datasheet PDF, AUIRFR4105 amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier AUIRFR4105 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier AUIRFR4105


N-Channel Tube 45m Ω @ 16A, 10V ±20V 700pF @ 25V 34nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRFR4105 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 29 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 27A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

AUIRFR4105 Features


the avalanche energy rating (Eas) is 29 mJ
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 31 ns
a threshold voltage of 2V


AUIRFR4105 Applications


There are a lot of Infineon Technologies
AUIRFR4105 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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