AUIRFR4104

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

37 ns

Power Dissipation :

140W

Rise Time :

69ns

Height :

2.3876mm

Number of Terminations :

2

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

2010

Number of Elements :

1

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

Series :

HEXFET®

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Continuous Drain Current (ID) :

42A

Drain to Source Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Turn On Delay Time :

17 ns

Contact Plating :

Tin

Terminal Form :

Gull wing

Power Dissipation-Max :

140W Tc

Element Configuration :

Single

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

480A

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 42A, 10V

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Width :

6.22mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Resistance :

5.5mOhm

Lead Free :

Lead Free

JEDEC-95 Code :

TO-252AA

REACH SVHC :

No SVHC

Fall Time (Typ) :

36 ns

Length :

6.7056mm

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Number of Pins :

3