AUIRFR3806TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 50μA

Terminal Form :

Gull wing

Additional Feature :

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Rds On (Max) @ Id, Vgs :

15.8m Ω @ 25A, 10V

Power Dissipation-Max :

71W Tc

Surface Mount :

yes

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Factory Lead Time :

16 Weeks

Drain-source On Resistance-Max :

0.0158Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 50V

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Published :

2011

Avalanche Energy Rating (Eas) :

73 mJ

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

170A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Series :

HEXFET®

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

43A

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE