AUIRFR3607

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

16 ns

Input Capacitance (Ciss) (Max) @ Vds :

3070pF @ 50V

Vgs (Max) :

±20V

Additional Feature :

HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Radiation Hardening :

No

Power Dissipation :

140W

Series :

HEXFET®

Power Dissipation-Max :

140W Tc

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Base Part Number :

AUIRFR3607

Contact Plating :

Tin

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

REACH SVHC :

No SVHC

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Threshold Voltage :

2V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.009Ohm

Case Connection :

DRAIN

Packaging :

Tube

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

9m Ω @ 46A, 10V

Vgs(th) (Max) @ Id :

4V @ 100µA

Fall Time (Typ) :

96 ns

Continuous Drain Current (ID) :

56A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

6.73mm

Rise Time :

110ns

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Drain to Source Breakdown Voltage :

75V

Width :

6.22mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Height :

2.39mm

Drain Current-Max (Abs) (ID) :

80A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Published :

2011

Number of Elements :

1

ECCN Code :

EAR99

Turn-Off Delay Time :

43 ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260