AUIRFR3504TRL
- Mfr.Part #
- AUIRFR3504TRL
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 56A DPAK
- Stock
- 25,189
- In Stock :
- 25,189
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- JEDEC-95 Code :
- TO-252AA
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.0092Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2150pF @ 25V
- Drain to Source Voltage (Vdss) :
- 40V
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Power Dissipation-Max :
- 140W Tc
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 87A
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2014
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 350A
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 40V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- HEXFET®
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 480 mJ
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 9.2m Ω @ 30A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 56A Tc
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Factory Lead Time :
- 13 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 2
- Reach Compliance Code :
- Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- AUIRFR3504TRL

N-Channel Tape & Reel (TR) 9.2m Ω @ 30A, 10V ±20V 2150pF @ 25V 71nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFR3504TRL Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 480 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2150pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 87A.Pulsed drain current is maximum rated peak drain current 350A.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
AUIRFR3504TRL Features
the avalanche energy rating (Eas) is 480 mJ
based on its rated peak drain current 350A.
a 40V drain to source voltage (Vdss)
AUIRFR3504TRL Applications
There are a lot of Infineon Technologies
AUIRFR3504TRL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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