AUIRFR3504TRL

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2014

Drain-source On Resistance-Max :

0.0092Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

140W Tc

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

350A

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Factory Lead Time :

13 Weeks

Case Connection :

DRAIN

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

40V

Drain Current-Max (Abs) (ID) :

87A

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

480 mJ

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 25V

Terminal Form :

Gull wing

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

9.2m Ω @ 30A, 10V

JEDEC-95 Code :

TO-252AA

DS Breakdown Voltage-Min :

40V

Packaging :

Tape and Reel (TR)