AUIRFR2905ZTRL
- Mfr.Part #
- AUIRFR2905ZTRL
- Manufacturer
- International Rectifier
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 42A DPAK
- Stock
- 12,422
- In Stock :
- 12,422
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Rds On (Max) @ Id, Vgs :
- 14.5m Ω @ 36A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 35 ns
- Factory Lead Time :
- 16 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 55V
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.0145Ohm
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 42A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- ULTRA LOW RESISTANCE
- JEDEC-95 Code :
- TO-252AA
- Published :
- 2013
- Series :
- HEXFET®
- Pulsed Drain Current-Max (IDM) :
- 240A
- Mounting Type :
- Surface Mount
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Number of Terminations :
- 2
- Power Dissipation :
- 110W
- Rise Time :
- 66ns
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1380pF @ 25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 110W Tc
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Reference Standard :
- AEC-Q101
- Datasheets
- AUIRFR2905ZTRL

N-Channel Tape & Reel (TR) 14.5m Ω @ 36A, 10V ±20V 1380pF @ 25V 44nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRFR2905ZTRL Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 55 mJ.A device's maximal input capacitance is 1380pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 42A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.This device reduces its overall power consumption by using drive voltage (10V).
AUIRFR2905ZTRL Features
the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 55V voltage
based on its rated peak drain current 240A.
AUIRFR2905ZTRL Applications
There are a lot of Infineon Technologies
AUIRFR2905ZTRL applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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