AUIRFR2905ZTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

JEDEC-95 Code :

TO-252AA

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 25V

Published :

2013

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

ULTRA LOW RESISTANCE

Rise Time :

66ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 36A, 10V

Power Dissipation-Max :

110W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

55 mJ

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

240A

Reference Standard :

AEC-Q101

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

55V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Fall Time (Typ) :

35 ns

Drain-source On Resistance-Max :

0.0145Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

110W

Continuous Drain Current (ID) :

42A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel