AUIRFR2905ZTR

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

35 ns

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Additional Feature :

ULTRA LOW RESISTANCE

Vgs (Max) :

±20V

Reference Standard :

AEC-Q101

Power Dissipation-Max :

110W Tc

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

55 mJ

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

42A Tc

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

240A

Drain to Source Breakdown Voltage :

55V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Power Dissipation :

110W

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1380pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

42A

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 36A, 10V

Factory Lead Time :

16 Weeks

Drain-source On Resistance-Max :

0.0145Ohm

Rise Time :

66ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Number of Terminations :

2

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V