AUIRFR2407TRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

26m Ω @ 25A, 10V

Number of Pins :

3

Turn-Off Delay Time :

65 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Factory Lead Time :

16 Weeks

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain to Source Breakdown Voltage :

75V

Power Dissipation :

110W

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

170A

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

JESD-609 Code :

e3

ECCN Code :

EAR99

Rise Time :

90ns

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Drain-source On Resistance-Max :

0.026ohm

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

66 ns

Continuous Drain Current (ID) :

42A

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

16 ns

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

110W Tc

Number of Elements :

1

Number of Terminations :

2

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Published :

2015

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE