AUIRFR2405

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

130ns

FET Type :

N-Channel

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

30A

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Drain to Source Breakdown Voltage :

55V

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material :

SILICON

Contact Plating :

Tin

Published :

2011

Height :

2.39mm

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Series :

HEXFET®

Turn-Off Delay Time :

55 ns

Power Dissipation :

110W

Transistor Application :

SWITCHING

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2430pF @ 25V

Terminal Form :

Gull wing

Length :

6.73mm

Pulsed Drain Current-Max (IDM) :

220A

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Width :

6.22mm

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Elements :

1

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

110W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

16m Ω @ 34A, 10V

Vgs (Max) :

±20V

Factory Lead Time :

39 Weeks

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

56A

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Fall Time (Typ) :

78 ns