AUIRFR2307Z

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

16m Ω @ 32A, 10V

Number of Elements :

1

FET Type :

N-Channel

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

29 ns

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

2190pF @ 25V

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Turn-Off Delay Time :

44 ns

Power Dissipation-Max :

110W Tc

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Mount :

Surface Mount

Height :

2.39mm

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

16 ns

Rise Time :

65ns

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Case Connection :

DRAIN

ECCN Code :

EAR99

Power Dissipation :

110W

Drain to Source Breakdown Voltage :

75V

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 100µA

JEDEC-95 Code :

TO-252AA

Number of Pins :

3

Number of Terminations :

2

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Length :

6.73mm

Factory Lead Time :

26 Weeks

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Width :

6.22mm

Continuous Drain Current (ID) :

42A

Contact Plating :

Tin

Packaging :

Tube